International Workshop on Junction Technology 2025 25th Anniversary Special Workshop & 100th Anniversary FET Invention

Date: June 4, 2025 (Wed.)
Venue: Kihada Hall
            Obaku Plaza, Uji Campus, Kyoto University
            Gokasho, Uji, Kyoto, 611-0011, JAPAN
Website: https://www.uji.kyoto-u.ac.jp/campus/obaku.html (Japanese only)

Special Workshop Objectives

The year 2025 marks the 25th anniversary of IWJT and the 100th anniversary of the invention of the FET. IWJT has primarily focused on FET-related technologies, including logic CMOS, memory, power devices, III-V HEMTs, and CMOS image sensors.
To commemorate these milestones, this workshop will reflect on the evolution of junction technology, drawing insights from IWJT’s 25-year archive. Discussions will explore how advancements in junction technology have influenced the development of FETs and other semiconductor devices. The event will also address current challenges and future directions in junction and FET technologies.

25th Anniversary Program Committee

Chair (IWJT General Co-chairs)	Kazuya Ohuchi	KIOXIA Corporation
Silicon Technology Members	Bunji Mizuno Kazuo Tsutsui Hiroyuki Ito Tadashi Yamaguchi Shinichi Kato Satoshi Shibata	UJT Lab. Institute of Science Tokyo Applied Materials, Inc. Renesas Electronics Corporation SCREEN Semiconductor Solutions Co., Ltd. Panasonic Operational Excellence Corporation
Members	Hiroshi Iwai Masayasu Tanjo Seiichiro Kawamura Mitsumasa Koyanagi Takashi Kuroi Tsunenobu Kimoto Hitoshi Wakabayashi Ichiro Mizushima Hiroki Okamoto Seiichi Shishiguchi	National Yang Ming Chiao Tung University DC Center Come Japan Science and Technology Agency Tohoku University Nissin Ion Equipment Co., Ltd. Kyoto University Institute of Science Tokyo NuFlare Technology Inc. KIOXIA Corporation Shindengen Electric Manufacturing Co., Ltd.