Keynote and Invited Speakers

Keynote Speakers

Dr. Julien Ryckaert

imec, Belgium
Title: CMOS 2.0: The next compute scaling paradigm

Prof. Toshiro Hiramoto

The University of Tokyo,  Japan
Title: Statistical Analysis of Subthreshold Current in Cryo-CMOS Transistors

Invited Speakers

Prof. Masashi Kato

Nagoya Institute of Technology, Japan
Title: Stacking Fault Knocking-down by High-energy Ion Implantation (SF-KHII) Method to Fabricate Reliable SiC Devices

Mr. Deven Raj

Applied Materials, USA
Title: Advances in Plasma Doping Applications to Enable Novel Device Scaling

Dr. Keiji Tatani

Sony Semiconductor Solutions Corporation, Japan
Title: Overview of Pixel Scaling Technology in CMOS Image Sensors for Imaging and Sensing Applications

Dr. Rinus Lee

TEL Technology Center, USA
Title: Interconnect Technology for the Angstrom Era and Beyond

Dr. Clement Porret

imec, Belgium
Title: Source/drain epitaxy and contacts for CFET applications

Prof. Satoshi Fujii

National Institute of Technology, Okinawa college, Japan
Title: Mechanistic Insights into Microwave Annealing for Lattice Defect Recovery

Prof. Hiroki Ago

Kyushu University, Japan
Title: Synthesis and Device Applications 2.5D Materials: Beyond 2D Materials with New Degrees of Freedom

Dr. Elisa Vianello

CEA-Leti, France
Title: Resistive Memories: Multifaceted Impact on Neuromorphic Computing

Dr. Marina Yamaguchi

KIOXIA Corporation, Japan
Title: Reliability of HfO2-based Ferroelectric Memory Devices

Mr. Takeyoshi Masuda

Sumitomo Electric Industries, Ltd.
Title: Key technologies supporting high performance and reliability of SiC VMOSFETs (Tentative)

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