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imec, Belgium
Title: CMOS 2.0: The next compute scaling paradigm
The University of Tokyo, Japan
Title: Statistical Analysis of Subthreshold Current in Cryo-CMOS Transistors
Nagoya Institute of Technology, Japan
Title: Stacking Fault Knocking-down by High-energy Ion Implantation (SF-KHII) Method to Fabricate Reliable SiC Devices
Applied Materials, USA
Title: Advances in Plasma Doping Applications to Enable Novel Device Scaling
Sony Semiconductor Solutions Corporation, Japan
Title: Overview of Pixel Scaling Technology in CMOS Image Sensors for Imaging and Sensing Applications
TEL Technology Center, USA
Title: Interconnect Technology for the Angstrom Era and Beyond
imec, Belgium
Title: Source/drain epitaxy and contacts for CFET applications
National Institute of Technology, Okinawa college, Japan
Title: Mechanistic Insights into Microwave Annealing for Lattice Defect Recovery
Kyushu University, Japan
Title: Synthesis and Device Applications 2.5D Materials: Beyond 2D Materials with New Degrees of Freedom
CEA-Leti, France
Title: Resistive Memories: Multifaceted Impact on Neuromorphic Computing
KIOXIA Corporation, Japan
Title: Reliability of HfO2-based Ferroelectric Memory Devices
Sumitomo Electric Industries, Ltd.
Title: Key technologies supporting high performance and reliability of SiC VMOSFETs (Tentative)