IWJT History

IWJT 2025 Award

Best Paper Award

　　　　　　　　


[S9-2] Characterization of vacancy-type defects in Mg- and N-implanted GaN by using a monoenergetic positron beam  


Authors: Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, and Michal Bockowski

Young Award


[S7-2] Jaehyo Jang (Institute of Science Tokyo) 


Paper title: P-type doping of PVD-MoS2 film with nitrogen annealing accelerated by hydrogen incorporation


[S8-1] Rahul Rai (National Yang Ming Chiao Tung University)


Paper title:
Enhancement-mode GaN Tri-gate MISHEMT with Fluorine Doped Charge Trapping Layer in Hybrid Ferroelectric Gate Stack

IWJT Award

  • Hiroshi Iwai

  • Bing-Zong Li

  • Bunji Mizuno

  • Masayasu Tanjo

  • Michael I. Current

  • Yu-Long Jiang

    • Previous Recipients

    IWJT Award 2023

    Michael I. Current

    His smile makes all of us in the field of junction technology happy.

    Professor Yu-Long Jiang

    Without his courage, nothing had progressed.

    Best Paper Award of IWJT2023

    Authors:
    Quintero, P. Acosta Alba, J. Michel Hartmann, P. Gergaud, V. Reboud and Philippe Rodriguez

    Paper title: Innovative Annealing Technology for Thermally Stable Ni(GeSn) Alloys

    Young Award of IWJT2023

    Paper title: A Novel Method to Improve CMP Selectivity by Ultra-High-Dose Ion Implantation


    Shuo Yuan/ Renesas Electronics Corp.

    Paper title: EZ-FET junctions activation by nanosecond laser annealing

    Nada Zerhouni Abdou/ CEA Leti and IMEP-LAHC

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