Keynote & Invited Speakers


Keynote Speakers

Please click the photo below to check the biography of each keynote speakers
Session 1


Session 3

Session 7


Invited speakers


Session 1


Development of Next Generation EUV Mask Blanks Takahiro Onoue (HOYA Group LSI Division, Japan)
Actinic blank inspection for high-NA EUV lithography Ryo Watanabe (Lasertec Corporation, Japan)

Session 2


Panel complexity and application diversification create FPD photomask growth opportunities above the FPD market itself Charles Annis (Omdia, Japan)

Session 3


Ensuring Yield and Reliability for Chiplets in a 3DIC Assembly John Ferguson (Siemens EDA, U.S.A)
Solutions Enabling Advanced Packaging & Heterogeneous Integration Ken-Ichiro MORI (Canon INC., Japan)
Photomask writers to capture wide range of advanced packaging applications Young Jin Park (Mycronic co., ltd, Republic of Korea)
Advanced Packaging & Photomask for Chiplet & Heterogeneous Integration Stefan Chitoraga (Yole Group, France)

Session 4


2X nm-Half-Pitch Damascene Interconnects Based on Nanoimprint Lithography for Back End of Line Process Kenta Suzuki (National Institute of Advanced Industrial Science and Technology, Japan)
A Proof of Concept for Hybrid Nano-Imprint Lithography Tetsuro Nakasugi (Kioxia Corporation., Japan)

Session 5


12th eBeam Initiative Survey Reports Semiconductor Industry Luminaries are Confident in High-NA EUV and Curvilinear Photomasks Aki Fujimura (D2S, Inc., U.S.A)
Integration of e-beam mask writer corrections in MPC applications Ingo Bork (Siemens Digital Industries Software, U.S.A)


Session 7


High NA Stitching: Mask Performance is a Key Natalia Davydova (ASML, Netherlands)

Session 8


Plasma Etching Considerations for Next Generation High NA EUV Photomask Absorber Materials Jeff Chen (Applied Materials, U.S.A)

Session 9


The journey of adopting a holistic sustainability mindset to enable more attractive and efficient products for the photomask industry Mikael Wahlsten (Mycronic AB,Sweden)

Session 11


EUV mask process development for high-NA EUV lithography Chang Ju Choi (Intel Corporation, U.S.A)

Session 12


Actinic patterned mask inspection for high-NA EUV lithography Hiroki Miyai (Lasertec Corporation, Japan)

Session 13


HiNA Actinic Patterned Mask Inspection Readiness and Performance for EUVL Safak Sayan (Intel Corporation, U.S.A)

Session 15


Core Innovations Enabling the Future of Multi-Beam Mask Writing Mathias Tomandl (IMS Nanofabrication GmbH, Austria)

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