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Nissin Ion Equipment Co., Ltd., Japan
Title: TBD
Infineon Technologies, Austria
Title: Overview on Power Devices with special regard to Ion Implantation
imec, Belgium
Title: Stress Engineering TCAD for Advanced Logic Architectures
IBM, USA
Title: TBD
Naogya University, Japan
Title: Toward Eliminating SiC Bipolar Degradation by Stacking Fault Knockdown by High Energy Ion Implantation (SF-KHII) Method
SUMCO CORPORATION, Japan
Title: Proximity Gettering Design of Silicon Wafers Using CH2P Molecular Ion Implantation Technique for High-sensitivity CMOS Image Sensors
National Taiwan University, Taiwan
Title: Nanosheets and CFETs Enabled by Epi Doping
CEA-Leti, France
Title: Advanced processes and applications of thin layer transfer via light ions implantation
Axcelis Technologies, Inc., USA
Title: New challenges and opportunities in WBG materials with ion implantation and annealing co-optimization
QST Takasaki, Japan
Title: Creation of multiple nitrogen-vacancy spin cubits in diamond by molecular ion implantation
Helmholtz Center, Germany
Title: Flash lamp annealing for semiconductors and related materials
Applied Materials, USA
Title: Implant Application to Meet Advanced Power Device Requirement