SPEAKERS

Plenary Speakers

Dr. Nobuo Nagai

Nissin Ion Equipment Co., Ltd., Japan
Title: TBD

Dr. Werner Schustereder

Infineon Technologies, Austria
Title: Overview on Power Devices with special regard to Ion Implantation

Invited Speakers

Dr. Geert Eneman

imec, Belgium
Title: Stress Engineering TCAD for Advanced Logic Architectures

Dr. Oleg Gluschenkov

IBM, USA
Title: TBD

Dr. Shunta Harada

Naogya University, Japan
Title: Toward Eliminating SiC Bipolar Degradation by Stacking Fault Knockdown by High Energy Ion Implantation (SF-KHII) Method

Dr. Takeshi Kadono

SUMCO CORPORATION, Japan
Title: Proximity Gettering Design of Silicon Wafers Using CH2P Molecular Ion Implantation Technique for High-sensitivity CMOS Image Sensors

Prof. Chee-Wee Liu

National Taiwan University, Taiwan
Title: Nanosheets and CFETs Enabled by Epi Doping

Dr. Frédéric Mazen

CEA-Leti, France
Title: Advanced processes and applications of thin layer transfer via light ions implantation

Dr. Fulvio Mazzamuto

Axcelis Technologies, Inc., USA
Title: New challenges and opportunities in WBG materials with ion implantation and annealing co-optimization

Dr. Takeshi Ohshima

QST Takasaki, Japan
Title: Creation of multiple nitrogen-vacancy spin cubits in diamond by molecular ion implantation

Dr. Lars Rebohle

Helmholtz Center, Germany
Title: Flash lamp annealing for semiconductors and related materials

Dr. Wei Zou (David Zou)

Applied Materials, USA
Title: Implant Application to Meet Advanced Power Device Requirement

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